Preparation and photoluminescence properties of yellow-emitting CuInS2/ZnS quantum dots embedded in TMAS-derived silica

Chikako Wada, Yoshiki Iso, Tetsuhiko Isobe, Hirokazu Sasaki

研究成果: Article

8 引用 (Scopus)

抄録

The degradation of CuInS2 (CIS) quantum dots (QDs) under excitation light due to photo-oxidization by O2 has been a significant problem. Embedding QDs into a matrix to protect them against O2 would improve their photostability. In this paper, hydrophilized CIS/ZnS/ZnS QDs prepared by a ligand exchange method were embedded in silica through a sol-gel method using tetramethylammonium silicate (TMAS) aqueous solution, in which negatively-charged nanoparticles can be well dispersed. QDs modified with 3-mercaptopropionic acid (MPA) were well dispersed into TMAS-derived silica. The obtained monolithic TMAS-derived silica composites containing embedded MPA-modified CIS/ZnS/ZnS QDs exhibited high photoluminescence (PL) quantum yields (43-47%). Changes in PL intensity under continuous excitation were measured to evaluate the photostability of the QDs. The PL intensity of the composite was 105% that of the initial value after 5 h irradiation, while the PL intensities of as-prepared QDs and a PMMA composite decreased to 88% and 92%, respectively. The good gas barrier properties of TMAS-derived silica likely caused the high photostability by preventing O2 from reaching the surface of the embedded QDs.

元の言語English
ページ(範囲)7936-7943
ページ数8
ジャーナルRSC Advances
7
発行部数13
DOI
出版物ステータスPublished - 2017

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Silicates
Silicon Dioxide
Semiconductor quantum dots
Photoluminescence
Silica
Composite materials
3-Mercaptopropionic Acid
Acids
tetramethylammonium
Quantum yield
Polymethyl Methacrylate
Sol-gel process
Gases
Ligands
Irradiation
Nanoparticles
Degradation

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

これを引用

@article{8aac346be7fb4f2580fdb841a68cbe95,
title = "Preparation and photoluminescence properties of yellow-emitting CuInS2/ZnS quantum dots embedded in TMAS-derived silica",
abstract = "The degradation of CuInS2 (CIS) quantum dots (QDs) under excitation light due to photo-oxidization by O2 has been a significant problem. Embedding QDs into a matrix to protect them against O2 would improve their photostability. In this paper, hydrophilized CIS/ZnS/ZnS QDs prepared by a ligand exchange method were embedded in silica through a sol-gel method using tetramethylammonium silicate (TMAS) aqueous solution, in which negatively-charged nanoparticles can be well dispersed. QDs modified with 3-mercaptopropionic acid (MPA) were well dispersed into TMAS-derived silica. The obtained monolithic TMAS-derived silica composites containing embedded MPA-modified CIS/ZnS/ZnS QDs exhibited high photoluminescence (PL) quantum yields (43-47{\%}). Changes in PL intensity under continuous excitation were measured to evaluate the photostability of the QDs. The PL intensity of the composite was 105{\%} that of the initial value after 5 h irradiation, while the PL intensities of as-prepared QDs and a PMMA composite decreased to 88{\%} and 92{\%}, respectively. The good gas barrier properties of TMAS-derived silica likely caused the high photostability by preventing O2 from reaching the surface of the embedded QDs.",
author = "Chikako Wada and Yoshiki Iso and Tetsuhiko Isobe and Hirokazu Sasaki",
year = "2017",
doi = "10.1039/c7ra00081b",
language = "English",
volume = "7",
pages = "7936--7943",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "13",

}

TY - JOUR

T1 - Preparation and photoluminescence properties of yellow-emitting CuInS2/ZnS quantum dots embedded in TMAS-derived silica

AU - Wada, Chikako

AU - Iso, Yoshiki

AU - Isobe, Tetsuhiko

AU - Sasaki, Hirokazu

PY - 2017

Y1 - 2017

N2 - The degradation of CuInS2 (CIS) quantum dots (QDs) under excitation light due to photo-oxidization by O2 has been a significant problem. Embedding QDs into a matrix to protect them against O2 would improve their photostability. In this paper, hydrophilized CIS/ZnS/ZnS QDs prepared by a ligand exchange method were embedded in silica through a sol-gel method using tetramethylammonium silicate (TMAS) aqueous solution, in which negatively-charged nanoparticles can be well dispersed. QDs modified with 3-mercaptopropionic acid (MPA) were well dispersed into TMAS-derived silica. The obtained monolithic TMAS-derived silica composites containing embedded MPA-modified CIS/ZnS/ZnS QDs exhibited high photoluminescence (PL) quantum yields (43-47%). Changes in PL intensity under continuous excitation were measured to evaluate the photostability of the QDs. The PL intensity of the composite was 105% that of the initial value after 5 h irradiation, while the PL intensities of as-prepared QDs and a PMMA composite decreased to 88% and 92%, respectively. The good gas barrier properties of TMAS-derived silica likely caused the high photostability by preventing O2 from reaching the surface of the embedded QDs.

AB - The degradation of CuInS2 (CIS) quantum dots (QDs) under excitation light due to photo-oxidization by O2 has been a significant problem. Embedding QDs into a matrix to protect them against O2 would improve their photostability. In this paper, hydrophilized CIS/ZnS/ZnS QDs prepared by a ligand exchange method were embedded in silica through a sol-gel method using tetramethylammonium silicate (TMAS) aqueous solution, in which negatively-charged nanoparticles can be well dispersed. QDs modified with 3-mercaptopropionic acid (MPA) were well dispersed into TMAS-derived silica. The obtained monolithic TMAS-derived silica composites containing embedded MPA-modified CIS/ZnS/ZnS QDs exhibited high photoluminescence (PL) quantum yields (43-47%). Changes in PL intensity under continuous excitation were measured to evaluate the photostability of the QDs. The PL intensity of the composite was 105% that of the initial value after 5 h irradiation, while the PL intensities of as-prepared QDs and a PMMA composite decreased to 88% and 92%, respectively. The good gas barrier properties of TMAS-derived silica likely caused the high photostability by preventing O2 from reaching the surface of the embedded QDs.

UR - http://www.scopus.com/inward/record.url?scp=85010720969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010720969&partnerID=8YFLogxK

U2 - 10.1039/c7ra00081b

DO - 10.1039/c7ra00081b

M3 - Article

AN - SCOPUS:85010720969

VL - 7

SP - 7936

EP - 7943

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 13

ER -