Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation

Shunji Yoshida, Takeharu Sekiguchi, Kohei M. Itoh

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

本文言語English
論文番号F10.17
ページ(範囲)231-236
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
832
出版ステータスPublished - 2005 8 25
イベント2004 MRS Fall Meeting - Boston, MA, United States
継続期間: 2004 11 292004 12 2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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