Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method

Yuji Awano, Kazutaka Tomizawa, Nobuo Hashizume

研究成果: Article査読

21 被引用数 (Scopus)

抄録

The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. Ids= 3.3 mA/20 μm, gm = 600 mS/mm, and fT- 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.

本文言語English
ページ(範囲)448-452
ページ数5
ジャーナルIEEE Transactions on Electron Devices
31
4
DOI
出版ステータスPublished - 1984 4月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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