Probing the behaviors of point defects in silicon and germanium using isotope superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, E. E. Haller

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

元の言語English
ホスト出版物のタイトルECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009
ページ51-54
ページ数4
エディション3
DOI
出版物ステータスPublished - 2009 12 1
イベントAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
継続期間: 2009 10 42009 10 9

出版物シリーズ

名前ECS Transactions
番号3
25
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
Austria
Vienna
期間09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Uematsu, M., Naganawa, M., Shimizu, Y., Itoh, K. M., Sawano, K., Shiraki, Y., & Haller, E. E. (2009). Probing the behaviors of point defects in silicon and germanium using isotope superlattices. : ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 (3 版, pp. 51-54). (ECS Transactions; 巻数 25, 番号 3). https://doi.org/10.1149/1.3204393