Probing the behaviors of point defects in silicon and germanium using isotope superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, Kohei M Itoh, K. Sawano, Y. Shiraki, E. E. Haller

研究成果: Conference contribution

1 引用 (Scopus)

抄録

In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

元の言語English
ホスト出版物のタイトルECS Transactions
ページ51-54
ページ数4
25
エディション3
DOI
出版物ステータスPublished - 2009
イベントAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
継続期間: 2009 10 42009 10 9

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
Austria
Vienna
期間09/10/409/10/9

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Superlattices
Point defects
Germanium
Isotopes
Silicon
Ions
Vacancies
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Uematsu, M., Naganawa, M., Shimizu, Y., Itoh, K. M., Sawano, K., Shiraki, Y., & Haller, E. E. (2009). Probing the behaviors of point defects in silicon and germanium using isotope superlattices. : ECS Transactions (3 版, 巻 25, pp. 51-54) https://doi.org/10.1149/1.3204393

Probing the behaviors of point defects in silicon and germanium using isotope superlattices. / Uematsu, M.; Naganawa, M.; Shimizu, Y.; Itoh, Kohei M; Sawano, K.; Shiraki, Y.; Haller, E. E.

ECS Transactions. 巻 25 3. 編 2009. p. 51-54.

研究成果: Conference contribution

Uematsu, M, Naganawa, M, Shimizu, Y, Itoh, KM, Sawano, K, Shiraki, Y & Haller, EE 2009, Probing the behaviors of point defects in silicon and germanium using isotope superlattices. : ECS Transactions. 3 Edn, 巻. 25, pp. 51-54, Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting, Vienna, Austria, 09/10/4. https://doi.org/10.1149/1.3204393
Uematsu M, Naganawa M, Shimizu Y, Itoh KM, Sawano K, Shiraki Y その他. Probing the behaviors of point defects in silicon and germanium using isotope superlattices. : ECS Transactions. 3 版 巻 25. 2009. p. 51-54 https://doi.org/10.1149/1.3204393
Uematsu, M. ; Naganawa, M. ; Shimizu, Y. ; Itoh, Kohei M ; Sawano, K. ; Shiraki, Y. ; Haller, E. E. / Probing the behaviors of point defects in silicon and germanium using isotope superlattices. ECS Transactions. 巻 25 3. 版 2009. pp. 51-54
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