Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版物ステータス||Published - 2002 1 1|
|イベント||2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States|
継続期間: 2002 2 3 → 2002 2 7
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering