CuInSe2 (CIS) films have been grown by molecular beam epitaxy on pseudo lattice-matched substrates which consist of a 1 μm-thick In0.29Ga0.71As layer grown on (001)-oriented GaAs substrates interposed with a linearly composition-graded InxGa1-xAs buffer (0≤x≤0.29), and have been characterized in comparison with the films grown directly on GaAs (001). High resolution X-ray diffraction analysis on CIS grown on pseudo lattice-matched substrates indicated the reduction of residual strain in the CIS films. Sharp free exciton emissions have been predominantly observed for the first time from the CIS films indicative of significant improvement in crystalline quality and of reduction of point defects. It also suggests that the misfit strain plays an important role in the formation of point defects in CIS epitaxial films.
|ジャーナル||Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory|
|出版ステータス||Published - 1996 1月 1|
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