Qualitative prediction of the confinement effect in the effective mass using a density functional k·p perturbation calculation

研究成果: Conference contribution

抄録

A procedure is proposed to predict electronic structures in thin films from bulk properties using density functional k·p perturbation method. This procedure is based on the phenomenological expression of zero-point energy using effective mass approximation. It is found that the results by this procedure and those calculated using slab models agrees very well. A prediction is also demonstrated for the electronic structures of <110> uniaxially strained silicon thin films in the <001> confinement.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 29th International Conference, ICPS 29
ページ481-482
ページ数2
DOI
出版ステータスPublished - 2009 12 1
イベント29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
継続期間: 2008 7 272008 8 1

出版物シリーズ

名前AIP Conference Proceedings
1199
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
国/地域Brazil
CityRio de Janeiro
Period08/7/2708/8/1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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