Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara; H. Kamada; Y. H. Zhang; T. Tanabe; N. I. Cade; D. Ding; S. R. Johnson; H. Gotoh; E. Kuramochi; M. Notomi; T. Sogawa

doi:10.1364/OE.16.005199

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara, H. Kamada, Y. H. Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, T. Sogawa

研究成果: Article › 査読

15 被引用数 (Scopus)

抄録

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

本文言語	English
ページ（範囲）	5199-5205
ページ数	7
ジャーナル	Optics Express
巻	16
号	8
DOI	https://doi.org/10.1364/OE.16.005199
出版ステータス	Published - 2008 4月 14
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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10.1364/OE.16.005199

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T1 - Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

AU - Tawara, T.

AU - Kamada, H.

AU - Zhang, Y. H.

AU - Tanabe, T.

AU - Cade, N. I.

AU - Ding, D.

AU - Johnson, S. R.

AU - Gotoh, H.

AU - Kuramochi, E.

AU - Notomi, M.

AU - Sogawa, T.

PY - 2008/4/14

Y1 - 2008/4/14

N2 - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

AB - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

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Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

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