Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara, H. Kamada, Y. H. Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, T. Sogawa

研究成果: Article査読

15 被引用数 (Scopus)

抄録

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

本文言語English
ページ(範囲)5199-5205
ページ数7
ジャーナルOptics Express
16
8
DOI
出版ステータスPublished - 2008 4 14
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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