Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Article査読

173 被引用数 (Scopus)

抄録

The quantum mechanical effects in silicon single-electron transistors have been investigated. The devices have been fabricated in the form of point contact metal-oxide-semiconductor field-effect transistors with various channel widths using electron beam lithography and the anisotropic etching technique on silicon-on-insulator substrates. The device with an extremely narrow channel shows Coulomb blockade oscillations at room temperature. At low temperatures, negative differential conductances and fine structures are superposed on the device characteristics, which are attributed to the quantum mechanical effects in the silicon quantum dot in the channel. The energy spectrum of the dot is extracted from the experimental results.

本文言語English
ページ(範囲)3691-3693
ページ数3
ジャーナルApplied Physics Letters
71
25
DOI
出版ステータスPublished - 1997 12月 22
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Quantum mechanical effects in the silicon quantum dot in a single-electron transistor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル