Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

K. Shimizu, Y. Einaga, A. Fujishima, K. Ohnishi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

本文言語English
ページ(範囲)35-40
ページ数6
ジャーナルSurface and Interface Analysis
33
1
DOI
出版ステータスPublished - 2002 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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