TY - JOUR
T1 - Radio-frequency plasma modeling for low-temperature processing
AU - Makabe, Toshiaki
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.
AB - Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.
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U2 - 10.1016/S1049-250X(01)80031-8
DO - 10.1016/S1049-250X(01)80031-8
M3 - Article
AN - SCOPUS:0001350670
SN - 1049-250X
VL - 44
SP - 127
EP - 154
JO - Advances in Atomic and Molecular Physics
JF - Advances in Atomic and Molecular Physics
IS - C
ER -