Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates

C. Hagiwara, K. M. Itoh, J. Muto, H. Nagasawa, K. Yagi, H. Harima, K. Mizoguchi, S. Nakashima

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We demonstrate Raman spectroscopy determination of stresses and strains as a function of distance from the growth interface in a 2.2 μm thick 3C-SiC film grown on a 6-inch Si substrate using low-pressure chemical vapor deposition. The Raman measurements have been performed with the back-scattering geometry on the SiC film that has been reactive ion etched to various thicknesses (0.44 - 2.2 μm). The values of the stress and strain determined as a function of the distance from the interface show maximum at the interface, decrease rapidly between 0 and 0.7 μm, and become constant between 0.7 and 2.2 μm. We believe this is a clear evidence for relaxation of stress and strain at the first 0.7 μm growth of SiC films on Si.

本文言語English
ページ(範囲)669-672
ページ数4
ジャーナルMaterials Science Forum
264-268
PART 1
出版ステータスPublished - 1998 1 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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