Reduction in crystallization time of Sb:Te films through addition of Bi

R. E. Simpson, D. W. Hewak, P. Fons, J. Tominaga, S. Guerin, B. E. Hayden

研究成果: Article査読

24 被引用数 (Scopus)

抄録

The electrical, optical, and phase change properties of bismuth doped Sb8 Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8 Te2 materials show potential as the active material in phase change data storage media.

本文言語English
論文番号141921
ジャーナルApplied Physics Letters
92
14
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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