Resistive switching characteristics of interfacial phase-change memory at elevated temperature

Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the highresistance (RESET) state in an iPCM device drops sharply at around 150°C to a low-resistance (SET) state, which differs by ∼400Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

本文言語English
論文番号04FE06
ジャーナルJapanese journal of applied physics
57
4
DOI
出版ステータスPublished - 2018 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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