Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

    研究成果: Article

    24 引用 (Scopus)

    抜粋

    Reversible switching of an optical gate switch in a Si waveguide including a thin Ge2Sb2Te5 phase-change material layer is reported. The phase-change was triggered by 660nm laser pulse irradiation onto the Ge2Sb2Te5 layer with no structural damage. The switching time from the initial amorphous state to the crystalline state was 240ns, and that from the crystalline state to the amorphous state was 110ns. The maximum extinction ratios for switching-off and switching-on over the wavelength range from 1525 to 1600nm were 5.7 and 2.5dB, respectively.

    元の言語English
    ページ(範囲)1460-1462
    ページ数3
    ジャーナルElectronics Letters
    46
    発行部数21
    DOI
    出版物ステータスPublished - 2010 10 14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    フィンガープリント Reversible optical gate switching in Si wire waveguide integrated with Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin film' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Ikuma, Y., Shoji, Y., Kuwahara, M., Wang, X., Kintaka, K., Kawashima, H., Tanaka, D., & Tsuda, H. (2010). Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film. Electronics Letters, 46(21), 1460-1462. https://doi.org/10.1049/el.2010.2538