Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

研究成果: Conference contribution

46 引用 (Scopus)

抄録

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

元の言語English
ホスト出版物のタイトル2008 IEEE International Interconnect Technology Conference, IITC
ページ237-239
ページ数3
DOI
出版物ステータスPublished - 2008
外部発表Yes
イベント2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
継続期間: 2008 6 12008 6 4

Other

Other2008 IEEE International Interconnect Technology Conference, IITC
United States
Burlingame, CA
期間08/6/108/6/4

Fingerprint

Carbon nanotubes
Current density
Temperature
Deterioration
Electric properties
Low-k dielectric

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., ... Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. : 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). [4546977] https://doi.org/10.1109/IITC.2008.4546977

Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. / Kawabata, Akio; Sato, Shintaro; Nozue, Tatsuhiro; Hyakushima, Takashi; Norimatsu, Masaaki; Mishima, Miho; Murakami, Tomo; Kondo, Daiyu; Asano, Koji; Ohfuti, Mari; Kawarada, Hiroshi; Sakai, Tadashi; Nihei, Mizuhisa; Awano, Yuji.

2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239 4546977.

研究成果: Conference contribution

Kawabata, A, Sato, S, Nozue, T, Hyakushima, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Asano, K, Ohfuti, M, Kawarada, H, Sakai, T, Nihei, M & Awano, Y 2008, Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. : 2008 IEEE International Interconnect Technology Conference, IITC., 4546977, pp. 237-239, 2008 IEEE International Interconnect Technology Conference, IITC, Burlingame, CA, United States, 08/6/1. https://doi.org/10.1109/IITC.2008.4546977
Kawabata A, Sato S, Nozue T, Hyakushima T, Norimatsu M, Mishima M その他. Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. : 2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239. 4546977 https://doi.org/10.1109/IITC.2008.4546977
Kawabata, Akio ; Sato, Shintaro ; Nozue, Tatsuhiro ; Hyakushima, Takashi ; Norimatsu, Masaaki ; Mishima, Miho ; Murakami, Tomo ; Kondo, Daiyu ; Asano, Koji ; Ohfuti, Mari ; Kawarada, Hiroshi ; Sakai, Tadashi ; Nihei, Mizuhisa ; Awano, Yuji. / Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. 2008 IEEE International Interconnect Technology Conference, IITC. 2008. pp. 237-239
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