Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

研究成果: Conference contribution

46 引用 (Scopus)

抜粋

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

元の言語English
ホスト出版物のタイトル2008 IEEE International Interconnect Technology Conference, IITC
ページ237-239
ページ数3
DOI
出版物ステータスPublished - 2008 9 9
外部発表Yes
イベント2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
継続期間: 2008 6 12008 6 4

出版物シリーズ

名前2008 IEEE International Interconnect Technology Conference, IITC

Other

Other2008 IEEE International Interconnect Technology Conference, IITC
United States
Burlingame, CA
期間08/6/108/6/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

フィンガープリント Robustness of CNT via interconnect fabricated by low temperature process over a high-density current' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., Murakami, T., Kondo, D., Asano, K., Ohfuti, M., Kawarada, H., Sakai, T., Nihei, M., & Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. : 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). [4546977] (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546977