Saturation of 640-nm absorption in Cr4+:YAG for an InGaN laser diode pumped passively Q-switched Pr3+:YLF laser

Hiroki Tanaka, Ryosuke Kariyama, Kodai Iijima, Kenichi Hirosawa, Fumihiko Kannari

研究成果: Article査読

30 被引用数 (Scopus)

抄録

We measure the absorption recovery time, the ground- and excited-state absorption cross sections of a Cr4+:YAG crystal at 640 nm for the first time. A pump-probe measurement reveals the existence of two recovery times of 26 ns and 5.6 μs. By a Z-scan experiment, the ground- and excited-state absorption cross sections are estimated to be 1.70-1.75×10-17 and 0.95-1.00×10-17cm2, respectively. The adequacy of the proposed model and the accuracy of the estimated parameters of the saturable absorber are verified by reproducing the experimentally obtained performance of a passively Q-switched Pr3+:YLF laser with the Cr4+:YAG saturable absorber from rate equation analysis.

本文言語English
ページ(範囲)19382-19395
ページ数14
ジャーナルOptics Express
23
15
DOI
出版ステータスPublished - 2015 7 27

ASJC Scopus subject areas

  • 原子分子物理学および光学

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