Scaling analysis of the low temperature conductivity in neutron-transmutation-doped 70Ge:Ga

K. M. Itoh, M. Watanabe, Y. Ootuka, E. E. Haller

研究成果: Conference article査読

13 被引用数 (Scopus)


We report on the scaling analysis of low temperature electron transport properties of nominally uncompensated neutron-transmutation-doped 70Ge:Ga samples in the critical regime for the metal-insulator transition. Ga concentration (N) and temperature (T) dependent conductivities σ(N,T) are shown to collapse onto a single universal curve using finite temperature scaling of a form σ(N,T) ∝ Tx f(|N/Nc - 1|/Ty) with x ≈ 0.38 and y ≈ 0.32 for the very small region of N = Nc ± 0.004Nc. The conductivity critical exponent μ = x/y = 1.2 ± 0.2 found from this analysis is significantly larger than μ ≈ 0.5 found from the analysis we performed previously on the same series of samples covering the much larger region of the concentration Nc < N < 1.4Nc. Determination of the true critical region, either N = Nc ± 0.4% or N = Nc ± 40%, is necessary in the future for the reliable determination of μ in Ge:Ga.

ジャーナルAnnalen der Physik (Leipzig)
出版ステータスPublished - 1999 12月 1
イベントProceedings of the LOCALIZATION 1999 International Conference on 'Disorder and Interaction in Transport Phenomena' - Hamburg, Ger
継続期間: 1999 7月 291999 8月 3

ASJC Scopus subject areas

  • 物理学および天文学(全般)


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