Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

S. Koshiba, S. Watanabe, Y. Nakamura, M. Yamauchi, M. Yoshita, M. Baba, H. Akiyama, H. Sakaki

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures (Ts), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7-290 K by optical pumping.

本文言語English
ページ(範囲)810-813
ページ数4
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータスPublished - 1999 5
外部発表はい
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8 311998 9 4

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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