Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

S. Koshiba, S. Watanabe, Y. Nakamura, M. Yamauchi, M. Yoshita, M. Baba, H. Akiyama, H. Sakaki

研究成果: Conference article査読

13 被引用数 (Scopus)

フィンガープリント

「Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds