Self-consistent modeling of feature profile evolution in plasma etching and deposition

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We investigate the relationship between local wall charging and the feature profile in a SiO2 trench pattern, by considering the transport of electrons, positive ions, and neutral radicals from the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF4(5%)/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO2 trench during plasma etching. Feature profiles of the SiO2 trench are estimated by the Level Set method under conditions with/without charging and neutral deposition.

本文言語English
ページ(範囲)L132-L134
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
4-7
DOI
出版ステータスPublished - 2006 2月 3

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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