Self-diffusion of Si at low temperatures revealed by annealing and Raman spectroscopy of Si isotope superlattices

Yasuo Shimizu, Kohei M. Itoh

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Silicon self-diffusivity at 775 - 875°C is determined based on the shift of optical phonons of diffusion annealed 28Si 20/30Si20 isotope superlattices by Raman spectroscopy. The planar bond-charge model is employed for theoretical calculations of the optical phonon frequencies which strongly depend on the interdiffusion between the interfaces of 28Si and 30Si layers. The atomic mass distribution at the interfaces is calculated based on Fick's diffusion law. Our values at low temperatures deviate from the previously reported single Arrhenius relation, indicating the change of the diffusion mechanism.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ205-206
ページ数2
DOI
出版ステータスPublished - 2007 12 1
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7 242006 7 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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