Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

研究成果: Article査読

71 被引用数 (Scopus)

抄録

Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

本文言語English
ページ(範囲)3674-3676
ページ数3
ジャーナルJournal of Applied Physics
93
6
DOI
出版ステータスPublished - 2003 3 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Self-diffusion of Si in thermally grown SiO<sub>2</sub> under equilibrium conditions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル