Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

研究成果: Article

66 引用 (Scopus)

抜粋

Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

元の言語English
ページ(範囲)3674-3676
ページ数3
ジャーナルJournal of Applied Physics
93
発行部数6
DOI
出版物ステータスPublished - 2003 3 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント Self-diffusion of Si in thermally grown SiO<sub>2</sub> under equilibrium conditions' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Takahashi, T., Fukatsu, S., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., Takahashi, Y., & Shiraishi, K. (2003). Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions. Journal of Applied Physics, 93(6), 3674-3676. https://doi.org/10.1063/1.1554487