Shallow impurity absorption spectroscopy in isotopically enriched silicon

M. Steger, A. Yang, D. Karaiskaj, M. L.W. Thewalt, E. E. Haller, J. W. Ager, M. Cardona, H. Riemann, N. V. Abrosimov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H. J. Pohl, K. M. Itoh

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Karaiskaj et al. showed that the isotopic randomness present in natural Si (nat Si) causes inhomogeneous broadening of many of the ground state to excited state infrared absorption transitions of the shallow donor phosphorous and acceptor boron. This was surprising since it was thought that the observed linewidths of shallow impurities in silicon are at their fundamental lifetime limit. We report improved high-resolution infrared absorption studies of these impurities in isotopically enriched 28Si, 29Si and 30Si. The new data improves on the linewidths of earlier spectra due to reduced concentration broadening. Some of the transitions in 28Si show the narrowest FWHM ever reported for shallow donor and acceptor absorption transitions.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ231-232
ページ数2
DOI
出版ステータスPublished - 2007
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7月 242006 7月 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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