TY - GEN
T1 - Shear force detector using piezo-resistive beams with sidewall-doping
AU - Takahashi, H.
AU - Nakai, A.
AU - Matsumoto, K.
AU - Shimoyama, I.
PY - 2012/5/7
Y1 - 2012/5/7
N2 - This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.
AB - This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.
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U2 - 10.1109/MEMSYS.2012.6170259
DO - 10.1109/MEMSYS.2012.6170259
M3 - Conference contribution
AN - SCOPUS:84860432057
SN - 9781467303248
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 599
EP - 602
BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
T2 - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Y2 - 29 January 2012 through 2 February 2012
ER -