Shear force detector using piezo-resistive beams with sidewall-doping

H. Takahashi, A. Nakai, K. Matsumoto, I. Shimoyama

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

本文言語English
ホスト出版物のタイトル2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
ページ599-602
ページ数4
DOI
出版ステータスPublished - 2012 5 7
外部発表はい
イベント2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France
継続期間: 2012 1 292012 2 2

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷版)1084-6999

Other

Other2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
CountryFrance
CityParis
Period12/1/2912/2/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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