We have studied the electrical properties of subquarter- micrometer-gate HEMT's by Monte Carlo simulation and experiment. The theoretical dependence of HEMT performance on the aspect ratio of the channel is discussed. The contribution of the transverse domain to the short-channel effect is also reported. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMT’s, as such a structure might have limited applications.
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