Short-wavelength electroluminescence from single-walled carbon nanotubes with high bias voltage

Norihito Hibino, Satoru Suzuki, Hiroyuki Wakahara, Yoshihiro Kobayashi, Tetsuya Sato, Hideyuki Maki

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Short-wavelength electroluminescence (EL) emission is observed from unipolar and ambipolar carbon nanotube field-effect transistors (CNFETs) under high bias voltage. EL measurements were carried out with an unsuspended single-walled carbon nanotube (SWNT) in high vacuum to prevent the oxidation damage induced by current heating. Short-wavelength emission under high bias voltage is obtained because of the Schottky barrier reduction and the electric field increase in a SWNT. The simultaneous measurements of transport and EL spectra revealed the excitation mechanism of impact excitation or electron and hole injection dependent on the conduction type of unipolar or ambipolar characteristics. In addition to the EL emission, blackbody radiation was also observed in a p-type CNFET. Taking into account the device temperature estimated from blackbody radiation, the contribution of impact excitation and thermal effect to the exciton production rate was evaluated.

本文言語English
ページ(範囲)1215-1222
ページ数8
ジャーナルACS Nano
5
2
DOI
出版ステータスPublished - 2011 2 22

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Short-wavelength electroluminescence from single-walled carbon nanotubes with high bias voltage」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル