Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba; Daisuke Matsushita; Koichi Muraoka; Shinichi Yasuda; Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

doi:10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

本文言語	English
ホスト出版物のタイトル	Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
ページ	231-236
ページ数	6
DOI	https://doi.org/10.1109/ISVLSI.2006.83
出版ステータス	Published - 2006 10月 9
イベント	IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 - Klarlsruhe, Germany 継続期間: 2006 3月 2 → 2006 3月 3

出版物シリーズ

名前	Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
巻	2006

Other

Other	IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006
国/地域	Germany
City	Klarlsruhe
Period	06/3/2 → 06/3/3

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1109/ISVLSI.2006.83

他のファイルとリンク

引用スタイル

Ohba, R., Matsushita, D., Muraoka, K., Yasuda, S., Tanamoto, T., Uchida, K., & Fujita, S. (2006). Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 (pp. 231-236). [1602445] (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006; Vol. 2006). https://doi.org/10.1109/ISVLSI.2006.83

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. / Ohba, Ryuji; Matsushita, Daisuke; Muraoka, Koichi その他.
Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. p. 231-236 1602445 (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006; Vol. 2006).

研究成果: Conference contribution

Ohba, R, Matsushita, D, Muraoka, K, Yasuda, S, Tanamoto, T, Uchida, K & Fujita, S 2006, Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. in Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006., 1602445, Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006, vol. 2006, pp. 231-236, IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006, Klarlsruhe, Germany, 06/3/2. https://doi.org/10.1109/ISVLSI.2006.83

Ohba R, Matsushita D, Muraoka K, Yasuda S, Tanamoto T, Uchida K その他. Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. In Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. p. 231-236. 1602445. (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006). doi: 10.1109/ISVLSI.2006.83

Ohba, Ryuji ; Matsushita, Daisuke ; Muraoka, Koichi その他. / Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation. Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006. 2006. pp. 231-236 (Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006).

@inproceedings{7dfcd9e360444a6c8ef5361e7fee886b,

title = "Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation",

abstract = "It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.",

author = "Ryuji Ohba and Daisuke Matsushita and Koichi Muraoka and Shinichi Yasuda and Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita",

year = "2006",

month = oct,

day = "9",

doi = "10.1109/ISVLSI.2006.83",

language = "English",

isbn = "0769525334",

series = "Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006",

pages = "231--236",

booktitle = "Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006",

note = "IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006 ; Conference date: 02-03-2006 Through 03-03-2006",

}

TY - GEN

T1 - Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

AU - Ohba, Ryuji

AU - Matsushita, Daisuke

AU - Muraoka, Koichi

AU - Yasuda, Shinichi

AU - Tanamoto, Tetsufumi

AU - Uchida, Ken

AU - Fujita, Shinobu

PY - 2006/10/9

Y1 - 2006/10/9

N2 - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

AB - It is shown that sub-0.1/μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate smallsize random number generation circuit, which is required for cryptograph application in mobile network security, A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design.

UR - http://www.scopus.com/inward/record.url?scp=33749324542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749324542&partnerID=8YFLogxK

U2 - 10.1109/ISVLSI.2006.83

DO - 10.1109/ISVLSI.2006.83

M3 - Conference contribution

AN - SCOPUS:33749324542

SN - 0769525334

SN - 9780769525334

T3 - Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

SP - 231

EP - 236

BT - Proceedings - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

T2 - IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures 2006

Y2 - 2 March 2006 through 3 March 2006

ER -

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

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出版物シリーズ

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