Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization

Yasuo Shimizu, Akio Takano, Kohei M. Itoh

研究成果: Article

9 引用 (Scopus)

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We present a silicon isotope superlattice structure that we believe to be the most ideal secondary ion mass spectrometry standard sample for the dopant concentration depth profiling required for characterization of the shallow junction formed by ion implantation. The precisely stacked alternating layers of silicon isotopes function as a depth ruler. Therefore, it enables us to calibrate the depth scale of dopant based on the positions of silicon isotopes. We show the depth profiles of silicon isotopes and arsenic in the arsenic ion-implanted silicon isotope superlattice as a representing example.

元の言語English
ページ(範囲)1345-1347
ページ数3
ジャーナルApplied Surface Science
255
発行部数4
DOI
出版物ステータスPublished - 2008 12 15

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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