Silicon single-electron memory & logic devices for room temperature operation

Junji Koga, Ryuji Ohba, Ken Uchida, Akira Toriumi

    研究成果: Conference article査読

    9 被引用数 (Scopus)

    抄録

    Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

    本文言語English
    ページ(範囲)143-146
    ページ数4
    ジャーナルTechnical Digest - International Electron Devices Meeting
    出版ステータスPublished - 2001 12 1
    イベントIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
    継続期間: 2001 12 22001 12 5

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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