Silicon single-electron tunnelling device interfaced with a CMOS inverter

K. Uchida, J. Koga, A. Ohata, A. Toriumi

    研究成果: Article査読

    8 被引用数 (Scopus)

    抄録

    A silicon single-electron tunnelling (SET) device with an oxidation-controlled narrow channel was fabricated on a silicon-on-insulator substrate. Measurements at liquid helium temperature show the clear Coulomb blockade effects. The Coulomb oscillations of the SET device are successfully transformed to voltage oscillations by combining it with an nMOSFET load. In addition, it is demonstrated that the obtained small voltage signals are amplified with a CMOS inverter operating at room temperature. These results constitute an important step toward the future hybrid Si ULSIs of SET and CMOS devices.

    本文言語English
    ページ(範囲)198-200
    ページ数3
    ジャーナルNanotechnology
    10
    2
    DOI
    出版ステータスPublished - 1999 6 1

    ASJC Scopus subject areas

    • バイオエンジニアリング
    • 化学 (全般)
    • 材料科学(全般)
    • 材料力学
    • 機械工学
    • 電子工学および電気工学

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