Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

    研究成果: Article

    14 引用 (Scopus)

    抜粋

    Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

    元の言語English
    ページ(範囲)697-698
    ページ数2
    ジャーナルElectronics Letters
    19
    発行部数17
    DOI
    出版物ステータスPublished - 1983 8 18

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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    Tomizawa, K., Awano, Y., Hashizume, N., & Kawashima, M. (1983). Simulation of GaAs submicron FET with hot-electron injection structure. Electronics Letters, 19(17), 697-698. https://doi.org/10.1049/el:19830475