Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa; Y. Awano; N. Hashizume; M. Kawashima

doi:10.1049/el:19830475

Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

研究成果: Article

14 引用（Scopus）

抜粋

Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 10⁷ (cm/s) in the channel, and extremely high values of I_d = 11 (mA/20 μm) and g_m = 1250 (mS/mm) are obtained. The unity-current-gain frequency f_T is found to reach about 250 GHz.

元の言語	English
ページ（範囲）	697-698
ページ数	2
ジャーナル	Electronics Letters
巻	19
発行部数	17
DOI	https://doi.org/10.1049/el:19830475
出版物ステータス	Published - 1983 8 18

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19830475

フィンガープリント Simulation of GaAs submicron FET with hot-electron injection structure' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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Tomizawa, K., Awano, Y., Hashizume, N., & Kawashima, M. (1983). Simulation of GaAs submicron FET with hot-electron injection structure. Electronics Letters, 19(17), 697-698. https://doi.org/10.1049/el:19830475

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author = "K. Tomizawa and Y. Awano and N. Hashizume and M. Kawashima",

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AU - Tomizawa, K.

AU - Awano, Y.

AU - Hashizume, N.

AU - Kawashima, M.

PY - 1983/8/18

Y1 - 1983/8/18

N2 - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

AB - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

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KW - Semiconductor devices and materials

KW - Simulation

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