抄録
Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.
本文言語 | English |
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ページ(範囲) | 697-698 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 19 |
号 | 17 |
DOI | |
出版ステータス | Published - 1983 8月 18 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学