Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa; Y. Awano; N. Hashizume; M. Kawashima

doi:10.1049/el:19830475

Simulation of GaAs submicron FET with hot-electron injection structure

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 10⁷ (cm/s) in the channel, and extremely high values of I_d = 11 (mA/20 μm) and g_m = 1250 (mS/mm) are obtained. The unity-current-gain frequency f_T is found to reach about 250 GHz.

本文言語	English
ページ（範囲）	697-698
ページ数	2
ジャーナル	Electronics Letters
巻	19
号	17
DOI	https://doi.org/10.1049/el:19830475
出版ステータス	Published - 1983 8 18
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19830475

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title = "Simulation of GaAs submicron FET with hot-electron injection structure",

abstract = "Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.",

keywords = "Field-effect transistors, Semiconductor devices and materials, Simulation",

author = "K. Tomizawa and Y. Awano and N. Hashizume and M. Kawashima",

year = "1983",

month = aug,

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doi = "10.1049/el:19830475",

language = "English",

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journal = "Electronics Letters",

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T1 - Simulation of GaAs submicron FET with hot-electron injection structure

AU - Tomizawa, K.

AU - Awano, Y.

AU - Hashizume, N.

AU - Kawashima, M.

PY - 1983/8/18

Y1 - 1983/8/18

N2 - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

AB - Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As, GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fT is found to reach about 250 GHz.

KW - Field-effect transistors

KW - Semiconductor devices and materials

KW - Simulation

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JF - Electronics Letters

SN - 0013-5194

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Simulation of GaAs submicron FET with hot-electron injection structure

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