SIMULATION OF NEAR BALLISTIC ELECTRON TRANSPORT IN A SUBMICRON GaAs DIODE WITH Al//xGa//1// minus //xAs/GaAs HETEROJUNCTION CATHODE.

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A Monte-Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with an Al//xGa//1// minus //xAs/GaAs heterojunction cathode. The electric field in the diode is self-consistently determined by solving Poisson's equation under reasonable boundary conditions. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field and average electron velocity, are computed. Based on these data, various properties of the electron transport in a submicron diode with a hot-electron injection mechanism are discussed.

本文言語English
ページ(範囲)37-41
ページ数5
ジャーナルIEE Proceedings I: Solid State and Electron Devices
132
1 pt 1
出版ステータスPublished - 1985 2 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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