Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors

Masashi Uematsu, Kohei M. Itoh, Gennady Mil'Nikov, Hideki Minari, Nobuya Mori

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

We have theoretically investigated the effects of random discrete dopant (RDD) distribution on the device characteristics in silicon nanowire (NW) transistors by performing non-equilibrium Green's function simulation combined with kinetic Monte Carlo method for generating RDD distribution. We show that a small number of dopant atoms diffusing into the channel have a significant impact on the threshold voltage (Vth) variation. We examine the dependence of the Vth variation on RDD distribution and find that the fluctuation can be significantly reduced by introducing side-wall gate spacers. We also find that the on-current fluctuation is mainly caused by randomness of As dopants in the source and drain extensions and hence is inherent in ultra-small NW transistors.

本文言語English
ホスト出版物のタイトル2012 IEEE International Electron Devices Meeting, IEDM 2012
ページ30.4.1-30.4.4
DOI
出版ステータスPublished - 2012
イベント2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
継続期間: 2012 12月 102012 12月 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
国/地域United States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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