Simulation study of charge modulation in coupled quantum dots in silicon

Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.

本文言語English
論文番号04DJ05
ジャーナルJapanese journal of applied physics
50
4 PART 2
DOI
出版ステータスPublished - 2011 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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