Simulations of Schottky barrier diodes and tunnel transistors

K. Matsuzawa, K. Uchida, A. Nishiyama

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.

    本文言語English
    ホスト出版物のタイトルExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
    出版社Institute of Electrical and Electronics Engineers Inc.
    ページ163-165
    ページ数3
    ISBN(電子版)0780343697, 9780780343696
    DOI
    出版ステータスPublished - 1998 1 1
    イベント6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
    継続期間: 1998 10 191998 10 21

    出版物シリーズ

    名前Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
    1998-October

    Other

    Other6th International Workshop on Computational Electronics, IWCE 1998
    CountryJapan
    CityOsaka
    Period98/10/1998/10/21

    ASJC Scopus subject areas

    • Modelling and Simulation
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Mathematical Physics

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