Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 4月|
ASJC Scopus subject areas