Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Kazuhiko Matsumoto, Seizo Kinoshita, Yoshitaka Gotoh, Kousuke Kurachi, Takahumi Kamimura, Masatoshi Maeda, Kazue Sakamoto, Masashi Kuwahara, Nobuhumi Atoda, Yuji Awano

研究成果: Article査読

58 被引用数 (Scopus)

抄録

Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of ∼1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000K.

本文言語English
ページ(範囲)2415-2418
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
4 B
DOI
出版ステータスPublished - 2003 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル