Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system

Yoshifumi Nakamine, Naoki Inaba, Tetsuo Kodera, Ken Uchida, Rui N. Pereira, Andre R. Stegner, Martin S. Brandt, Martin Stutzman, Shunri Oda

    研究成果: Article査読

    16 被引用数 (Scopus)

    抄録

    In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

    本文言語English
    論文番号025002
    ジャーナルJapanese journal of applied physics
    50
    2
    DOI
    出版ステータスPublished - 2011 2月

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「Size reduction and phosphorus doping of silicon nanocrystals prepared by a very high frequency plasma deposition system」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル