Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

    研究成果: Article査読

    49 被引用数 (Scopus)

    抄録

    An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

    本文言語English
    ページ(範囲)368-369
    ページ数2
    ジャーナルElectronics Letters
    46
    5
    DOI
    出版ステータスPublished - 2010 3 19

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    フィンガープリント 「Small-sized optical gate switch using Ge<sub>2</sub>Sb<sub>2</sub>Te <sub>5</sub> phase-change material integrated with silicon waveguide」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル