Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Y. Ikuma; Y. Shoji; M. Kuwahara; X. Wang; K. Kintaka; H. Kawashima; D. Tanaka; H. Tsuda

doi:10.1049/el.2010.3588

Small-sized optical gate switch using Ge₂Sb₂Te ₅ phase-change material integrated with silicon waveguide

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

研究成果: Article › 査読

52 被引用数 (Scopus)

抄録

An optical gate switch using Ge₂Sb₂Te₅ phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.

本文言語	English
ページ（範囲）	368-369
ページ数	2
ジャーナル	Electronics Letters
巻	46
号	5
DOI	https://doi.org/10.1049/el.2010.3588
出版ステータス	Published - 2010 3 19

ASJC Scopus subject areas

Electrical and Electronic Engineering

文献へのアクセス

10.1049/el.2010.3588

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引用スタイル

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AU - Kawashima, H.

AU - Tanaka, D.

AU - Tsuda, H.

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