抄録
An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (∼2m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5dB was achieved over a wavelength range of 75nm.
本文言語 | English |
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ページ(範囲) | 368-369 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 46 |
号 | 5 |
DOI | |
出版ステータス | Published - 2010 3 19 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering