Solid-state lasers directly pumped by InGaN-based green and blue laser diodes

Hiroki Tanaka, Kodai Iijima, Ryota Sawada, Naoto Sugiyama, Yasuaki Kiyota, Fumihiko Kannari

    研究成果: Conference contribution

    抜粋

    Development of solid-state lasers, titanium-doped sapphire and praseodymium doped LiYF4 lasers, directly pumped by indium gallium nitride-based green or blue semiconductor lasers is presented. We experimentally revealed the existence of an additional absorption induced at 450-nm pumping, and compared the laser performance with respect to the pump wavelength (450, 478 and 520 nm). A mode-locking operation is demonstrated with a pulse width of 126 fs and an average power of 315 mW. For Pr:LiYF4 lasers, power scaling up to 4.8 W is achieved utilizing four 3.5-W 445-nm diodes at 640 nm with a slope efficiency of 50%. Intracavity second harmonic generation of passively Q-switched laser at 320 nm and a SESAM mode-locking at 640 nm are also obtained.

    元の言語English
    ホスト出版物のタイトル2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
    出版者Institute of Electrical and Electronics Engineers Inc.
    ページ1-4
    ページ数4
    2017-January
    ISBN(電子版)9781509062904
    DOI
    出版物ステータスPublished - 2017 11 22
    イベント2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 - Singapore, Singapore
    継続期間: 2017 7 312017 8 4

    Other

    Other2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017
    Singapore
    Singapore
    期間17/7/3117/8/4

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

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  • これを引用

    Tanaka, H., Iijima, K., Sawada, R., Sugiyama, N., Kiyota, Y., & Kannari, F. (2017). Solid-state lasers directly pumped by InGaN-based green and blue laser diodes. : 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 (巻 2017-January, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2017.8118649