Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

A. Kinoshita; Y. Tsuchiya; A. Yagishita; K. Uchida; J. Koga

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida, J. Koga

研究成果: Conference article › 査読

抄録

A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi₂ process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

本文言語	English
ページ（範囲）	168-169
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 2004 10月 1
イベント	2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States 継続期間: 2004 6月 15 → 2004 6月 17

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

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abstract = "A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.",

author = "A. Kinoshita and Y. Tsuchiya and A. Yagishita and K. Uchida and J. Koga",

year = "2004",

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language = "English",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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note = "2004 Symposium on VLSI Technology - Digest of Technical Papers ; Conference date: 15-06-2004 Through 17-06-2004",

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T1 - Solution for high-performance Schottky-source/drain MOSFETs

T2 - 2004 Symposium on VLSI Technology - Digest of Technical Papers

AU - Kinoshita, A.

AU - Tsuchiya, Y.

AU - Yagishita, A.

AU - Uchida, K.

AU - Koga, J.

PY - 2004/10/1

Y1 - 2004/10/1

N2 - A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

AB - A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

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JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

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Y2 - 15 June 2004 through 17 June 2004

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