Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida, J. Koga

    研究成果: Conference article査読

    149 被引用数 (Scopus)

    抄録

    A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

    本文言語English
    ページ(範囲)168-169
    ページ数2
    ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
    出版ステータスPublished - 2004 10 1
    イベント2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
    継続期間: 2004 6 152004 6 17

    ASJC Scopus subject areas

    • 電子工学および電気工学

    フィンガープリント

    「Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル