TY - JOUR
T1 - Solution for high-performance Schottky-source/drain MOSFETs
T2 - 2004 Symposium on VLSI Technology - Digest of Technical Papers
AU - Kinoshita, A.
AU - Tsuchiya, Y.
AU - Yagishita, A.
AU - Uchida, K.
AU - Koga, J.
PY - 2004/10/1
Y1 - 2004/10/1
N2 - A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
AB - A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity, compared to the conventional MOSFET. In conclusion, the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
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M3 - Conference article
AN - SCOPUS:4544244783
SP - 168
EP - 169
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
Y2 - 15 June 2004 through 17 June 2004
ER -