Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

Nobuo Saito, Fumio Sato, Kuniharu Takizawa, Jun ichi Kusano, Hideyo Okumura, Tahito Aida, Toshiharu Saiki, Motoichi Ohtsu

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.

本文言語English
ページ(範囲)L896-L898
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
36
7 B
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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