Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope

T. Saiki, S. Mononobe, M. Ohtsu, N. Saito, J. Kusano

研究成果: Article査読

33 被引用数 (Scopus)

抄録

An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion.

本文言語English
ページ数1
ジャーナルApplied Physics Letters
67
DOI
出版ステータスPublished - 1995 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル