Spin current depolarization under high electric fields in undoped InGaAs

N. Okamoto, H. Kurebayashi, K. Harii, Y. Kajiwara, H. Beere, I. Farrer, T. Trypiniotis, K. Ando, D. A. Ritchie, C. H.W. Barnes, E. Saitoh

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure the spin polarization. For moderate electric fields, the spin polarization was constant, whereas the significant change in the spin polarization was found in the high electric field range. The spin-density rate equation, together with carrier transport analysis, clarifies that the observed change is attributed to the voltage-induced Auger process which modifies the carrier number in InGaAs.

本文言語English
論文番号242104
ジャーナルApplied Physics Letters
98
24
DOI
出版ステータスPublished - 2011 6 13
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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