Spin-dependent CPP transport properties of semiconductive-oxide/ferromagnet multilayers

Yukio Nozaki, Y. Maeda, K. Matsuyama

研究成果: Article

1 引用 (Scopus)

抄録

The spin-dependent CPP (current perpendicular to plane) transport properties in semiconductive-oxide(MOx)/ferromagnet multilayers consisting of CoPt/Co/MOx/Co/MOx/Co/CoPt, where M = Ti, Sn, were investigated by magneto-transport measurement. The XRD patterns reveal that the structures of sputtered MOx films are amorphous or nanocrystalline. The MR ratio of a TiOx-based multilayer (0.43%) was much smaller than that of a SnOx-based one (2.0%) at T = 77 K. As inferred from the shape of MR curves with a large saturation field above 4kOe, suppressed MR change in the TiOx-based multilayer is caused by the interlayer diffusion of Co atoms into the TiOx layer. The same behavior was not observed in the SnOx-based one. The MR ratio was reduced by half on increasing tSnO(x) from 4 to 8 nm. This decrease can be ascribed to the scattering of the spin-polarized electron in the SnOx layer.

元の言語English
ページ(範囲)157-159
ページ数3
ジャーナルJournal of Magnetism and Magnetic Materials
239
発行部数1-3
DOI
出版物ステータスPublished - 2002 2
外部発表Yes

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Transport properties
Oxides
Multilayers
transport properties
oxides
interlayers
Amorphous films
saturation
curves
scattering
Scattering
atoms
Atoms
electrons
Electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Spin-dependent CPP transport properties of semiconductive-oxide/ferromagnet multilayers. / Nozaki, Yukio; Maeda, Y.; Matsuyama, K.

:: Journal of Magnetism and Magnetic Materials, 巻 239, 番号 1-3, 02.2002, p. 157-159.

研究成果: Article

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abstract = "The spin-dependent CPP (current perpendicular to plane) transport properties in semiconductive-oxide(MOx)/ferromagnet multilayers consisting of CoPt/Co/MOx/Co/MOx/Co/CoPt, where M = Ti, Sn, were investigated by magneto-transport measurement. The XRD patterns reveal that the structures of sputtered MOx films are amorphous or nanocrystalline. The MR ratio of a TiOx-based multilayer (0.43{\%}) was much smaller than that of a SnOx-based one (2.0{\%}) at T = 77 K. As inferred from the shape of MR curves with a large saturation field above 4kOe, suppressed MR change in the TiOx-based multilayer is caused by the interlayer diffusion of Co atoms into the TiOx layer. The same behavior was not observed in the SnOx-based one. The MR ratio was reduced by half on increasing tSnO(x) from 4 to 8 nm. This decrease can be ascribed to the scattering of the spin-polarized electron in the SnOx layer.",
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N2 - The spin-dependent CPP (current perpendicular to plane) transport properties in semiconductive-oxide(MOx)/ferromagnet multilayers consisting of CoPt/Co/MOx/Co/MOx/Co/CoPt, where M = Ti, Sn, were investigated by magneto-transport measurement. The XRD patterns reveal that the structures of sputtered MOx films are amorphous or nanocrystalline. The MR ratio of a TiOx-based multilayer (0.43%) was much smaller than that of a SnOx-based one (2.0%) at T = 77 K. As inferred from the shape of MR curves with a large saturation field above 4kOe, suppressed MR change in the TiOx-based multilayer is caused by the interlayer diffusion of Co atoms into the TiOx layer. The same behavior was not observed in the SnOx-based one. The MR ratio was reduced by half on increasing tSnO(x) from 4 to 8 nm. This decrease can be ascribed to the scattering of the spin-polarized electron in the SnOx layer.

AB - The spin-dependent CPP (current perpendicular to plane) transport properties in semiconductive-oxide(MOx)/ferromagnet multilayers consisting of CoPt/Co/MOx/Co/MOx/Co/CoPt, where M = Ti, Sn, were investigated by magneto-transport measurement. The XRD patterns reveal that the structures of sputtered MOx films are amorphous or nanocrystalline. The MR ratio of a TiOx-based multilayer (0.43%) was much smaller than that of a SnOx-based one (2.0%) at T = 77 K. As inferred from the shape of MR curves with a large saturation field above 4kOe, suppressed MR change in the TiOx-based multilayer is caused by the interlayer diffusion of Co atoms into the TiOx layer. The same behavior was not observed in the SnOx-based one. The MR ratio was reduced by half on increasing tSnO(x) from 4 to 8 nm. This decrease can be ascribed to the scattering of the spin-polarized electron in the SnOx layer.

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KW - Spin dependent transport

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