Spin-dependent recombination involving oxygen-vacancy complexes in silicon

David P. Franke, Felix Hoehne, Leonid S. Vlasenko, Kohei M. Itoh, Martin S. Brandt

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

本文言語English
論文番号195207
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
89
19
DOI
出版ステータスPublished - 2014 5 23

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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