Spin-related tunneling in lithographically-defined silicon quantum dots

T. Kodera, G. Yamahata, T. Kambara, K. Horibe, Ken Uchida, C. M. Marcus, S. Oda

研究成果: Conference contribution

抄録

We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

元の言語English
ホスト出版物のタイトル2010 Silicon Nanoelectronics Workshop, SNW 2010
DOI
出版物ステータスPublished - 2010
外部発表Yes
イベント2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
継続期間: 2010 6 132010 6 14

Other

Other2010 15th Silicon Nanoelectronics Workshop, SNW 2010
United States
Honolulu, HI
期間10/6/1310/6/14

Fingerprint

Semiconductor quantum dots
Carrier concentration
Fabrication
Silicon

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Kodera, T., Yamahata, G., Kambara, T., Horibe, K., Uchida, K., Marcus, C. M., & Oda, S. (2010). Spin-related tunneling in lithographically-defined silicon quantum dots. : 2010 Silicon Nanoelectronics Workshop, SNW 2010 [5562576] https://doi.org/10.1109/SNW.2010.5562576

Spin-related tunneling in lithographically-defined silicon quantum dots. / Kodera, T.; Yamahata, G.; Kambara, T.; Horibe, K.; Uchida, Ken; Marcus, C. M.; Oda, S.

2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010. 5562576.

研究成果: Conference contribution

Kodera, T, Yamahata, G, Kambara, T, Horibe, K, Uchida, K, Marcus, CM & Oda, S 2010, Spin-related tunneling in lithographically-defined silicon quantum dots. : 2010 Silicon Nanoelectronics Workshop, SNW 2010., 5562576, 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, Honolulu, HI, United States, 10/6/13. https://doi.org/10.1109/SNW.2010.5562576
Kodera T, Yamahata G, Kambara T, Horibe K, Uchida K, Marcus CM その他. Spin-related tunneling in lithographically-defined silicon quantum dots. : 2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010. 5562576 https://doi.org/10.1109/SNW.2010.5562576
Kodera, T. ; Yamahata, G. ; Kambara, T. ; Horibe, K. ; Uchida, Ken ; Marcus, C. M. ; Oda, S. / Spin-related tunneling in lithographically-defined silicon quantum dots. 2010 Silicon Nanoelectronics Workshop, SNW 2010. 2010.
@inproceedings{cf04b9e8f0a1444eb7d24726d46aa890,
title = "Spin-related tunneling in lithographically-defined silicon quantum dots",
abstract = "We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.",
author = "T. Kodera and G. Yamahata and T. Kambara and K. Horibe and Ken Uchida and Marcus, {C. M.} and S. Oda",
year = "2010",
doi = "10.1109/SNW.2010.5562576",
language = "English",
isbn = "9781424477272",
booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

}

TY - GEN

T1 - Spin-related tunneling in lithographically-defined silicon quantum dots

AU - Kodera, T.

AU - Yamahata, G.

AU - Kambara, T.

AU - Horibe, K.

AU - Uchida, Ken

AU - Marcus, C. M.

AU - Oda, S.

PY - 2010

Y1 - 2010

N2 - We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

AB - We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.

UR - http://www.scopus.com/inward/record.url?scp=77958014617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958014617&partnerID=8YFLogxK

U2 - 10.1109/SNW.2010.5562576

DO - 10.1109/SNW.2010.5562576

M3 - Conference contribution

AN - SCOPUS:77958014617

SN - 9781424477272

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

ER -