Sputter growth of chalcogenide superlattice films for future phase change memory applications

Yuta Saito, Kirill V. Mitrofanov, Kotaro Makino, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者S. Shingubara, Z. Karim, K. Kobayashi, B. Magyari-Kope, H. Shima, Y. Saito, J.G. Park, G. Bersuker, H. Kubota, C. Hacker, Y.S. Obeng
出版社Electrochemical Society Inc.
ページ49-54
ページ数6
3
ISBN(電子版)9781607688471
ISBN(印刷版)9781510871632
DOI
出版ステータスPublished - 2018
外部発表はい
イベントSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

出版物シリーズ

名前ECS Transactions
番号3
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Conference

ConferenceSymposium on Nonvolatile Memories 6 and Surface Characterization and Manipulation for Electronic Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

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