Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

P. J. Fons; Shingeru Niki; Akimasa Yamada; Yasumasa Okada; D. J. Tweet

Strain-induced diffusion in heteroepitaxially grown CuInSe₂ on GaAs substrates

P. J. Fons, Shingeru Niki, Akimasa Yamada, Yasumasa Okada, D. J. Tweet

研究成果: Article › 査読

抄録

A series of CuInSe₂ thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe₂ thin film in-plane lattice constant for CuInSe₂ films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In_0.29Ga_0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe₂ layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

本文言語	English
ページ（範囲）	39-43
ページ数	5
ジャーナル	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
巻	60
号	3
出版ステータス	Published - 1996 1 1
外部発表	はい

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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引用スタイル

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abstract = "A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.",

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T1 - Strain-induced diffusion in heteroepitaxially grown CuInSe2 on GaAs substrates

AU - Fons, P. J.

AU - Niki, Shingeru

AU - Yamada, Akimasa

AU - Okada, Yasumasa

AU - Tweet, D. J.

PY - 1996/1/1

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N2 - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

AB - A series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. High resolution x-ray diffraction measurements revealed the presence of a second phase strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2 layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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