Stress Concentration and Profile under Thermal Cycling Test in Power Device Heat Dissipation Structures Using Double-Side Chip Bonding with Ag Sintered Layer on Cu Plate

Kensuke Osonoe, Masaaki Aoki, Takahiro Asai, Yoshio Murakami, Hitoshi Kida, Goro Yoshinari, Nobuhiko Nakano

    研究成果: Conference contribution

    3 被引用数 (Scopus)

    抄録

    Power semiconductor devices and modules need highly efficient heat dissipation system having a chip bonding layer with high thermal conductance and reliability. Ag sintering chip-Attachment has several advantages for heat dissipation. This work clarifies the thermal stress profiles under thermal cycling test by 3D multi-physics solver for double-side and single-side direct bonding structures with Ag sintered layers on Cu plates. Results show that the maximum stress point is at Si chip corner in the double-side bonding structure with Ag sintered layers, and the maximum stress point is at bonding layer corner in the single-side bonding structure. The stress values of Ag sintered layer in double-side bonding are much lower than the stress values of single-side bonding. In contrast the maximum stress value of Si chip in double-side bonding is higher than that in single-side bonding, because the upward convex warp of Si is suppressed in double-side bonding. It was found that the maximum stress value at Si chip corner for Ag sintered bonding is lower than that for conventional solder in double-side bonding structure. There is also the bonding layer TCE value for minimizing the thermal stress at bonding center, since the stress at bonding interface is thought to be caused by the difference of thermal expansion between Ag sintered layer and Cu plate.

    本文言語English
    ホスト出版物のタイトルProceedings - ECTC 2016: 66th Electronic Components and Technology Conference
    出版社Institute of Electrical and Electronics Engineers Inc.
    ページ1047-1053
    ページ数7
    2016-August
    ISBN(電子版)9781509012039
    DOI
    出版ステータスPublished - 2016 8月 16
    イベント66th IEEE Electronic Components and Technology Conference, ECTC 2016 - Las Vegas, United States
    継続期間: 2016 5月 312016 6月 3

    Other

    Other66th IEEE Electronic Components and Technology Conference, ECTC 2016
    国/地域United States
    CityLas Vegas
    Period16/5/3116/6/3

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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